PART |
Description |
Maker |
BGA616-11 |
Silicon Germanium Broadband MMIC Amplifier
|
Infineon Technologies A...
|
UPC3225TB-E3 UPC3225TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
UPC3236TK-E2 UPC3236TK-E2-A UPC3236TK |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
SGA-3586 SGA-3586Z |
DC-5000 MHz Silicon Germanium Cascadable HBT MMIC Amplifier
|
SIRENZA MICRODEVICES
|
SGL0622Z |
5MHz to 4000MHz LOW NOISE MMIC AMPLIFIER SILICON GERMANIUM
|
RF Micro Devices
|
BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
NESG3032M14-T3-A NESG3032M14-A NESG3032M14-T3 NESG |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell California Eastern Labs
|
NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell CEL[California Eastern Labs]
|
NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|